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COM140T COM340T COM240T COM440T
(COTS) COMMERCIAL OFF-THE-SHELF POWER MOSFETS IN TO-257AA PA C K A G E
100V Thru 500V, Up To 14 Amp, N-Channel M O S F E Ts In Hermetic Metal Package
FEATURES
* Isolated Hermetic Metal Package * Fast Switching * Low RDS(on)
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER COM140T COM240T COM340T COM440T
@ 25C
VD S 100V 200V 400V 500V R DS(on) .12 .21 .59 .90 I D(MAX) 14A 14A 10A 7A
3.1
S C H E M ATIC
CONNECTION DIAGRAM
1. GATE 2. DRAIN 3. SOURCE 1 23
8 09 R0
31 - 1 .
3.1
ELECTRICAL CHARACTERISTICS:
STATIC
Min. Typ. Max. Units Test Conditions 100 20 . 40 . 100 -100 01 . 02 . 14 1.40 1.73 .2 1 .2 2 0.25 10 . V V nA nA mA mA A V VG S = 0 , I = 250 mA D V D S = VG S, D = 250 mA I V G S = 20 V V G S = - 20 V V D S = Max. Rat., VG S = 0 V D S = 0.8 Max. Rat., VG S = 0 , TC = 125 C I D(on) On-State Drain Current1 Voltage1 R DS(on) Static Drain-Source On-State Resistance1 R DS(on) Static Drain-Source On-State Resistance1 V G S = 1 V ID = 15 A, 0, TC = 125 C V G S = 1 V ID = 15 A 0, VD S 2 VDS(on),VG S = 10 V I D(on) On-State Drain Current1 Voltage1 R DS(on) Static Drain-Source On-State Resistance1 R DS(on) Static Drain-Source On-State Resistance1 0.41 V G S = 1 V ID = 10 A, 0, TC = 125 C 0.21 V G S = 1 V ID = 10 A 0, 14 18 . 21 . A V V DS(on) Static Drain-Source On-State V G S = 1 V ID = 15 A 0, V DS(on) Static Drain-Source On-State V GS(th) I GSSF ISSR G ISS D Parameter B VD S S Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current 01 . 02 . 20 . 40 . 100 - 100 0.25 10 . V nA nA mA mA
COM140T - COM440T
ELECTRICAL CHARACTERISTICS:
STATIC
Parameter B VD S S Drain-Source Breakdown Voltage V GS(th) I GSSF ISSR G ISS D Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current
TC = 25 unless otherwise noted
TC = 25 unless otherwise noted
P/N COM140T
P/N COM240T
Min. Typ. Max. Units Test Conditions 200 V VG S = 0 , I = 250 mA D V D S = VG S, I = 250 mA D V G S = 20 V V G S = - 20 V V D S = Max. Rat., VG S = 0 V D S = 0.8 Max. Rat., VG S = 0 , TC = 125 C VD S 2 VDS(on),VG S = 10 V V G S = 1 V ID = 10 A 0,
gf s C iss C oss C rss Td(on) t r Td(off) t f
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
10 1275 550 160 16 19 42 24
S( ) V D S W pF pF pF ns ns ns ns
2 VDS(on), D = 15 A I
gf s C iss C oss C rss Td(on) t r Td(off) t f
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
60 . 1000 250 100 17 52 36 30
S( ) V D S W pF pF pF ns ns ns ns
VG S = 0 V D S = 25 V f = 1 MHz V D D = 3 V ID @5 A 0, R g = 5 W ,VG S =10 V
(MOSFET) switching times are essentially independent of operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I S IM S VS D t r Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 200 - 20 . V ns - 108 A -2 7 A
Modified MOSPOWER symbol showing the integral P-N J n t o r c i i r. ucin etfe
G D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I S IM S
S
Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350
-1 8 -7 2 -. 15
TC = 25 C IS = -24 A, VG S = 0 , TJ = 150 C IF =IS , , d F/ds = 100 A/ms l
VS D t r
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
() W A A V ns
() W
31 - 2 .
DYNAMIC
DYNAMIC
2 VDS(on), D = 10 A I VG S = 0 V D S = 25 V f = 1 MHz V D D = 5 V ID @ 18 A 7, R g = W ,VG S= 10 V 5
(MOSFET) switching times are essentially independent of operating temperature.
Modified MOSPOWER symbol showing the integral P-N J n t o r c i i r. ucin etfe
G
D
S
TC = 25 C IS = -18 A, VG S = 0 , TJ = 150 C IF =IS , , d F/ds = 100 A/ms l
ELECTRICAL CHARACTERISTICS:
STATIC
Parameter B VD S S Drain-Source Breakdown Voltage V GS(th) I GSSF ISSR G ISS D Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current I D(on) On-State Drain Current1 Voltage1 R DS(on) Static Drain-Source On-State Resistance1 R DS(on) Static Drain-Source On-State Resistance1 10 25 . 01 . 02 . 20 .
TC = 25 unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N COM440T
Parameter B VD S S Drain-Source Breakdown Voltage V GS(th) I GSSF ISSR G ISS D Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current I D(on) On-State Drain Current1 Voltage1 45 . 32 . 01 . 02 . 20 .
TC = 25 unless otherwise noted
P/N COM340T
Min. Typ. Max. Units Test Conditions 400 40 . 100 -100 0.25 10 . V V nA nA mA mA A 29 . 0.59 12 . V VG S = 0 , I = 250 mA D V D S = VG S, D = 250 mA I V G S = 20 V V G S = - 20 V V D S = Max. Rat., VG S = 0 V D S = 0.8 Max. Rat., VG S = 0 , TC = 125 C VD S 2 VDS(on),VG S = 10 V
Min. Typ. Max. Units Test Conditions 500 40 . 100 - 100 0.25 10 . V V nA nA mA mA A 3.52 0.90 18 . V VG S = 0 , I = 250 mA D V D S = VG S, I = 250 mA D V G S = 20 V V G S = - 20 V V D S = Max. Rat., VG S = 0 V D S = 0.8 Max. Rat., VG S = 0 , TC = 125 C VD S 2 VDS(on),VG S = 10 V
V DS(on) Static Drain-Source On-State
V G S = 1 V ID = 5 A 0, V G S = 1 V ID = 5 A 0, V G S = 1 V ID = 5 A 0, , TC = 125 C
V DS(on) Static Drain-Source On-State R DS(on) Static Drain-Source On-State Resistance1 R DS(on) Static Drain-Source On-State Resistance1
V G S = 1 V ID = 4 A 0, V G S = 1 V ID = 4 A 0, V G S = 1 V ID = 4 A 0, , TC = 125 C
gf s C iss C oss C rss Td(on) t r Td(off) t f
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
40 .
44 . 1150 165 70 17 12 45 30
S( ) V D S W pF pF pF ns ns ns ns
2 VDS(on), D = 5 A I
gf s C iss C oss C rss Td(on) t r Td(off) t f
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
40 .
48 . 1225 200 85 17 5 42 14
S( ) V D S W pF pF pF ns ns ns ns
VG S = 0 V D S = 25 V f = 1 MHz V D D = 1 5 V ID = 5 A 7, R g = 5 W ,VD S =10V
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I S IM S VS D t r Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 530 -2 V ns -4 0 A -1 0 A
Modified MOSPOWER symbol showing the integral P-N J n t o r c i i r. ucin etfe
G D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I S IM S
S
Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 700
-8 -3 2 -2
TC = 25 C IS = -10 A, VG S = 0 , TJ = 150 C IF =IS , , d F/ds = 100 A/ms l
VS D t r
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width
300msec, Duty Cycle
2%.
() W A A V ns
() W
31 - 2 .
DYNAMIC
DYNAMIC
2 VDS(on), D = 4 A I VG S = 0 V D S = 25 V f = 1 MHz V D D = 2 0 V ID = 4 A 0, R g = 5 W ,VD S =10 V
(MOSFET) switching times are essentially independent of operating temperature.
Modified MOSPOWER symbol showing the integral P-N J n t o r c i i r. ucin etfe
G
D
COM140T - COM440T
S
TC = 25 C IS = -18 A, VG S = 0 , TJ = 150 C IF =IS , , d F/ds = 100 A/ms l
2
3.1
COM140T - COM440T ABSOLUTE MAXIMUM RATINGS ( C = 25C unless otherwise noted) T
Parameter VD S VD G R I @ TC = 25C D I @ TC = 100C D IM D VG S P D @ TC = 25C P D @ TC = 100C Junction To Case Drain-Source Voltage Drain-Gate Voltage (RG S = 1 M ) Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Gate-Source Voltage Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor
2 2
COM140T 100 100 14 14 56 20 125 50 10 . .015
COM240T COM340T COM440T 200 200 14 11 56 20 125 50 10 . .015 400 400 10 6 40 20 125 50 10 . .015 500 500 8 5 32 20 125 50 10 . .015
Units V V A A A V W W W/C W/C
Junction To Ambient Linear Derating Factor TJ Tstg Lead Temperature Operating and Storage Temperature Range (1/16" from case for 10 secs.) 2%.
-55 to 150 300
-55 to 150 -55 to 150 -55 to 150 300 300 300
C C
1 Pulse Test: Pulse width 300 sec. Duty Cycle 2 Package pin limitation = 10 Amps
THERMAL RESISTA N C E
R thJC R thJA Junction-to-Case Junction-to-Ambient 1.00 65 C/W C/W Free Air Operation
POWER DERATING
MECHANICAL OUTLINE TO-257
.420 .410 .200 .190 .045 .035 .665 .645 .537 .527 .430 .410 .038 MAX.
3.1
.150 .140
.750 .500
.005
.035 .025
.100 TYP.
.120 TYP.
205 Crawford Street, Leominster, MA 01453 USA (978) 534-5776 FAX (978) 537-4246

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